29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
AALBORG, DENMARK - OCTOBER 1-5, 2018
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
AALBORG, DENMARK - OCTOBER 1-5, 2018
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
AALBORG, DENMARK - OCTOBER 1-5, 2018
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
AALBORG, DENMARK - OCTOBER 1-5, 2018
“I really enjoyed ESREF in Aalborg and was very pleased with all the arrangements and the overall logistical organization of the conference at this beautiful location. I should say it was a roaring success with a record number of submissions, exhibitors and a beautifully planned out program with adequate opportunities for technical interactions and social networking. I hope to attend ESREF more consistently in the years to come and look forward to more learning experiences there with different cultural connections to different parts of Europe!”
“I had a great time at ESREF 2018. I learned a lot from the technical talks especially on the GaN reliability. I got chance to network with many other researchers/engineers from academia and industries. The social event at Voergaard Castle was also very well organized, served with a great food and very entertaining shows. Overall, I can say ESREF 2018 was a great success. Congratulations to all the organizers! Looking forward to attend ESREF 2019”
Wardhana A. Sasangka (IPFA 2019 Technical Program Co-Chair/SMART, Singapore)
“It was excellent, from the content and from the organisation”
“Even if I think very hard I cannot come with any idea what could be improved at all”
“The catering was perfect”
Andreja Rojko, ECPE
“I really enjoyed taking part”
Stefan Oberhoff, Bosch
“Thank you for organizing the conference, I really enjoyed it very much!”
Daniel Beckmeier, Infineon
“Really, ESREF2018 was a great conference!”
Paolo Cova
“Indeed, it was a very interesting, and also very well organized, conference”
Paolo Mangone
“Very well organized ESREF conference”
Søren Jørgensen, Grundfos
“Thanks for organising the ESREF conference. It was a good one”
Jose Ortiz Gonzalez
“Thank you for this great conference. I enjoyed it a lot”
Shahriyar Kaboli
“You did a great job”
Giovanna Mura
“First keynote speaker is superb”
“Great presentations, good topics”
“The organisation was great”
Anonymous conference participants (on the 1st conference day)
“Highly interesting keynote from ITRS”
“The location has enough room for all the visitors”
“My favourite is the app”
Anonymous conference participants (on the 1st conference day)
“The food was good”
“Very interesting first day”
“Good overview of several subjects during tutorials”
Anonymous conference participants (on the 1st conference day)
“A nice event”
“Great opportunity to meet people from other countries and fields”
“It is very positive”
Anonymous conference participants (on the Young Professional Reception)
“Thanks to all the organization”
“Nice opportunity to network”
“I liked the setting”
Anonymous conference participants (on the Young Professional Reception)
“Very good”
“I have collected only positive experiences”
“Excellent”
Anonymous conference participants (on the 3rd conference day)
“It was my best dinner”
“Really it was a pleasure”
“The bus travel was greatly organised”
Anonymous conference participants (on the Gala Dinner)
“Interesting small stories around the castle”
“The location was wonderful”
“The idea with the historical touch was very entertaining”
Anonymous conference participants (on the Gala Dinner)
“Amazing!”
“Super fun!”
“Very nice!”
Anonymous conference participants (on the Gala Dinner)
“I really enjoyed the drinks, food and the best was maybe the organiser and the artists”
“A very nice, unique and original event – well done”
Anonymous conference participants (on the Gala Dinner)
TUTORIAL LECTURE
Reliability of SiC and GaN power devices from the industrial perspective
Superior performance and proven reliability have been enabling the successful introduction of SiC and GaN power devices into important power electronics applications. This tutorial will review the reliability aspects of wide band-gap semiconductors and provide a deeper insight into the industrial qualification procedures for safe technology and product releases.
Thomas Detzel - Infineon Reliability of SiC and GaN power devices from the industrial perspective - part I
Abstract
Compact devices with unique switching performance have been the promise of GaN power technology since several years. And now we are experiencing the exciting time when this is becoming reality. This part of the tutorial will first discuss the main reliability responses of normally-off GaN power HEMTs such as gate module reliability, time-dependent dielectric breakdown, and dynamic Rdson. Then the industrial qualification procedure will be described covering technology, device, and product reliability tests. Focus will be given also to application tests which are of particular importance for the release of this new material system in power electronics.
Biography
Dr. Thomas Detzel received the M.S. degree in physics from the University of Constance, Germany, in 1991 and the Ph.D. degree in surface and thin-film physics in 1994 from the Max-Planck-Institute Garching, Germany. Afterwards he was a Postdoc with the Institut de Physique et Chimie des Matériaux de Strasbourg, France. In 1995, he was with Rodel Europe GmbH, where he was an Application Manager for chemical–mechanical polishing of semiconductor wafers. In 1999, he joined Infineon Technologies Austria AG in Villach, where he was responsible for the metallization development of automotive power semiconductors, has been the Project Manager of different power integrated circuit developments from 2004-2011, and has been leading the research project Robust Metallization and Interconnect at the Competence Center for Automotive and Industrial Electronics from 2006-2011. Since 2011 he is managing the technology development group for GaN power devices at Infineon Villach.
Thomas Aichinger - Infineon Reliability of SiC and GaN power devices from the industrial perspective - part II
Abstract
Reliability aspects and reliability test methods of SiC are discussed and compared with the well-established Si-based power devices. Strong emphasis is put on the gate oxide system of SiC vs. Si MOSFETs. It is shown, that the high reliability and low failure rates of modern IGBTs can be achieved also with SiC MOS devices using electrical screening and an appropriate dimensioning of the gate oxide with respect to the gate use voltage. Furthermore, the consequences of the higher mechanical stiffness on the packaging technology as well as the issues arising from the handling of 10x higher electrical field in the semiconductor body are discussed and suited test methods are suggested.
Biography
Dr. Thomas Aichinger received his M.S. degree in physics from Karl-Franzens University Graz in 2007 and his Ph.D. degree in electrical engineering from the technical university of Vienna in 2010. In 2011 and 2012 he was a Postdoctoral researcher at Penn State University, PA, USA. In 2012 he joint Infineon Technologies Austria AG and is currently in the SiC MOSFET technology development. His research interests include point defects as well as MOSFET reliability issues such as bias temperature instabilities and gate oxide reliability.
