29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
AALBORG, DENMARK - OCTOBER 1-5, 2018
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
AALBORG, DENMARK - OCTOBER 1-5, 2018
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
AALBORG, DENMARK - OCTOBER 1-5, 2018
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
AALBORG, DENMARK - OCTOBER 1-5, 2018


“I really enjoyed ESREF in Aalborg and was very pleased with all the arrangements and the overall logistical organization of the conference at this beautiful location. I should say it was a roaring success with a record number of submissions, exhibitors and a beautifully planned out program with adequate opportunities for technical interactions and social networking. I hope to attend ESREF more consistently in the years to come and look forward to more learning experiences there with different cultural connections to different parts of Europe!”

Nagarajan Raghavan (IPFA Co-Chair, SUTD, Singapore)



“I had a great time at ESREF 2018. I learned a lot from the technical talks especially on the GaN reliability. I got chance to network with many other researchers/engineers from academia and industries. The social event at Voergaard Castle was also very well organized, served with a great food and very entertaining shows. Overall, I can say ESREF 2018 was a great success. Congratulations to all the organizers! Looking forward to attend ESREF 2019”

Wardhana A. Sasangka (IPFA 2019 Technical Program Co-Chair/SMART, Singapore)



“It was excellent, from the content and from the organisation”

“Even if I think very hard I cannot come with any idea what could be improved at all”

“The catering was perfect”

Andreja Rojko, ECPE



“I really enjoyed taking part”

Stefan Oberhoff, Bosch

“Thank you for organizing the conference, I really enjoyed it very much!”

Daniel Beckmeier, Infineon



“Really, ESREF2018 was a great conference!”

Paolo Cova

“Indeed, it was a very interesting, and also very well organized, conference”

Paolo Mangone



“Very well organized ESREF conference”

Søren Jørgensen, Grundfos

“Thanks for organising the ESREF conference. It was a good one”

Jose Ortiz Gonzalez



“Thank you for this great conference. I enjoyed it a lot”

Shahriyar Kaboli

“You did a great job”

Giovanna Mura



“First keynote speaker is superb”

“Great presentations, good topics”

“The organisation was great”

Anonymous conference participants (on the 1st conference day)



“Highly interesting keynote from ITRS”

“The location has enough room for all the visitors”

“My favourite is the app”

Anonymous conference participants (on the 1st conference day)



“The food was good”

“Very interesting first day”

“Good overview of several subjects during tutorials”

Anonymous conference participants (on the 1st conference day)



“A nice event”

“Great opportunity to meet people from other countries and fields”

“It is very positive”

Anonymous conference participants (on the Young Professional Reception)



“Thanks to all the organization”

“Nice opportunity to network”

“I liked the setting”

Anonymous conference participants (on the Young Professional Reception)



“Very good”

“I have collected only positive experiences”

“Excellent”

Anonymous conference participants (on the 3rd conference day)



“It was my best dinner”

“Really it was a pleasure”

“The bus travel was greatly organised”

Anonymous conference participants (on the Gala Dinner)



“Interesting small stories around the castle”

“The location was wonderful”

“The idea with the historical touch was very entertaining”

Anonymous conference participants (on the Gala Dinner)



“Amazing!”

“Super fun!”

“Very nice!”

Anonymous conference participants (on the Gala Dinner)



“I really enjoyed the drinks, food and the best was maybe the organiser and the artists”

“A very nice, unique and original event – well done”

Anonymous conference participants (on the Gala Dinner)





INVITED SPEECH
Barry Linder - Manager, Technology Reliability and Quality, IBM Systems Group, Yorktown Heights, NY
The end of gate oxide scaling (for real this time)
Abstract
Gate Oxide Scaling has traditionally been one of the key enablers of performance enhancement from one node to the next. Back in 1999, it was thought that dielectric breakdown would prevent scaling thinner than ~25A. Model improvement, such as progressive breakdown and power law voltage acceleration, supported scaling below 15A. Now with replacement metal gate FinFETs, dielectric breakdown is not preventing further scaling, but rather end of life performance loss due to excessive NBTI. This talk will explore the optimization of gate oxide thickness and end of life performance.
Biography
Barry P. Linder received his B.S. from Pennsylvania State University in 1993, and an M.S and Ph.D. in electrical engineering from the University of California at Berkeley in 1999. His doctoral thesis dealt with plasma processing, plasma implantation, and plasma charging damage. From 1999-2016, Dr. Linder worked as a Research Staff Member at the IBM T. J. Watson Research Center, Yorktown Heights, NY. Initially his work centered on the breakdown of ultra-thin gate oxides and he received an “Outstanding Paper Award" at the 2003 International Reliability Physics Symposium. After 2003 his focus changed to electrical characterization and integration of metal gates and high-k materials. During this time he expanded his activities to include all reliability aspects of high-k/metal gate stacks with emphasis on bias temperature instability and dielectric breakdown. More recently, he has added focus on circuit reliability by integrating device level reliability with circuit level functionality, optimizing the trade-off of system performance with system reliability. Since 2016, Dr. Linder has been managing the Technology Reliability and Quality group for IBM Systems, bridging his research and technology background with technology qualification and product reliability.
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